• All sections
  • H - Electricity
  • H10B - Electronic memory devices
  • H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H10B 41/27

Total number of patents in this class: 865

10-year publication summary

0
0
0
0
0
9
122
286
280
168
2015 2016 2017 2018 2019 2020 2021 2022 2023 2024

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
131630
206
Micron Technology, Inc.
24960
166
Kioxia Corporation
9847
116
SK Hynix Inc.
11030
89
Yangtze Memory Technologies Co., Ltd.
1940
73
Sandisk Technologies LLC
5684
69
Lodestar Licensing Group LLC
583
38
Taiwan Semiconductor Manufacturing Company, Ltd.
36809
16
Applied Materials, Inc.
16587
12
Macronix International Co., Ltd.
2562
12
Semiconductor Energy Laboratory Co., Ltd.
10902
8
Intel Corporation
45621
6
Lam Research Corporation
4775
6
JPMorgan Chase Bank, National Association
10964
5
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1115
5
Intel NDTM US LLC
373
5
Tokyo Electron Limited
11599
4
ASM IP Holding B.V.
1715
3
Monolithic 3D Inc.
270
3
Institute of Microelectronics, Chinese Academy of Sciences
1290
2
Other owners 21