- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H10B 41/27
Total number of patents in this class: 865
10-year publication summary
0
|
0
|
0
|
0
|
0
|
9
|
122
|
286
|
280
|
168
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 131630 |
206 |
Micron Technology, Inc. | 24960 |
166 |
Kioxia Corporation | 9847 |
116 |
SK Hynix Inc. | 11030 |
89 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
73 |
Sandisk Technologies LLC | 5684 |
69 |
Lodestar Licensing Group LLC | 583 |
38 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
16 |
Applied Materials, Inc. | 16587 |
12 |
Macronix International Co., Ltd. | 2562 |
12 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
8 |
Intel Corporation | 45621 |
6 |
Lam Research Corporation | 4775 |
6 |
JPMorgan Chase Bank, National Association | 10964 |
5 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
5 |
Intel NDTM US LLC | 373 |
5 |
Tokyo Electron Limited | 11599 |
4 |
ASM IP Holding B.V. | 1715 |
3 |
Monolithic 3D Inc. | 270 |
3 |
Institute of Microelectronics, Chinese Academy of Sciences | 1290 |
2 |
Other owners | 21 |